InP HBT Technology

Department of Electronics and Electrical Engineering

University of Glasgow

We seek to appoint a PhD project student who is expected to contribute to the development of research in indium phosphide (InP) heterojunction bipolar transistor (HBT) electronics. A challenging project is available to a candidate with (or about to obtain) a minimum of a 2:1 degree (or an MSc) in Electronic Engineering, Physics or a related field. He/she should be highly motivated with a dedication towards very structured research comprising a high content of experimental work. The PhD studentship is funded by the EPSRC and is for UK and EU students only.

Informal enquiries and requests for further details can be obtained from Dr E Wasige (email: ).

Application forms can be downloaded from http://www.gla.ac.uk/sras. Candidates should forward their completed applications before Friday, 3 March 2006 to:

Dr Karen McIlvaney
Dept of Electronics and Electrical Engineering
University of Glasgow
Rankine Building, Oakfield Avenue
Glasgow G12 8LT
United Kingdom.