The heterogeneous integration of high optical index III-V and Silicon semiconductor materials is now considered as a win-win approach for Micro-Nano-Photonics. When combined with low index media (such as, for example, silica), along a variety of nano-structuration schemes, they may result in photonic nanostructures with remarkable optical confinement properties, allowing for a very efficient control over photons in time and space. III-V semiconductors can, in addition, offer their unique emission and non-linear characteristics, which are missing to silicon.

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